Title :
Microstructure and critical current of hot-pressed (Bi,Pb)/sub 2/Sr/sub 2/Ca/sub 2/Cu/sub 3/O/sub 10/ ceramics
Author :
Hu, Q.Y. ; Yu, D. ; Liu, H.K. ; Dou, S.X. ; Apperley, M.
Author_Institution :
Centre for Superconducting & Electron. Mater., Wollongong Univ., NSW, Australia
fDate :
6/1/1997 12:00:00 AM
Abstract :
After being sintered for different times, (Bi,Pb)/sub 2/Sr/sub 2/Ca/sub 2/Cu/sub 3/O/sub 10/ bulk samples were pressed isothermally at 850/spl deg/C under constant pressure of 15 MPa for 1 hour. The samples were examined using SEM, EDS, XRD, and the mass density, critical temperature (T/sub c/) and critical current density (J/sub c/) were measured. As a result of removing voids in the materials under pressure and high temperature. It was found that the mass density significantly increased. In addition to high mass density, grain alignment within the samples was also improved which produced a significant improvement in the J/sub c/. To achieve high J/sub c/, samples require sintering prior to hot-pressing for reasonably long times.
Keywords :
X-ray diffraction; bismuth compounds; calcium compounds; ceramics; critical current density (superconductivity); critical currents; crystal microstructure; density; high-temperature superconductors; high-temperature techniques; hot pressing; lead compounds; scanning electron microscopy; sintering; strontium compounds; superconducting transition temperature; (BiPb)Sr/sub 2/Ca/sub 2/Cu/sub 3/O/sub 1/; 1 hour; 15 MPa; 850 degC; EDS; SEM; XRD; bulk samples; constant pressure; critical current; critical current density; critical temperature; grain alignment; high temperature; hot-pressed (Bi,Pb)/sub 2/Sr/sub 2/Ca/sub 2/Cu/sub 3/O/sub 10/ ceramics; isothermal pressing; mass density; microstructure; sintering; voids; Annealing; Ceramics; Conducting materials; Critical current; High temperature superconductors; Microstructure; Strontium; Superconducting cables; Superconducting materials; X-ray scattering;
Journal_Title :
Applied Superconductivity, IEEE Transactions on
