DocumentCode :
1528879
Title :
Future challenges and directions for nitride materials and light emitters
Author :
Akasaki, Isamu ; Wetzel, Christian
Author_Institution :
High-Tech. Res. Center, Meijo Univ., Nagoya, Japan
Volume :
85
Issue :
11
fYear :
1997
fDate :
11/1/1997 12:00:00 AM
Firstpage :
1750
Lastpage :
1751
Abstract :
A review is presented of future issues on wide-bandgap group-III nitride materials and device technology for optoelectronic and high-temperature devices such as LEDs
Keywords :
III-V semiconductors; energy gap; high-temperature techniques; light emitting diodes; optical materials; optoelectronic devices; reviews; semiconductor lasers; LEDs; device technology; high-temperature devices; light emitters; nitride materials; optoelectronic devices; review; wide-bandgap group-III nitride materials; Circuits; Dielectric materials; Light emitting diodes; Optical devices; Optical feedback; Optical films; Optical materials; Optical superlattices; Semiconductor materials; Temperature;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/5.649652
Filename :
649652
Link To Document :
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