Title :
Ink-Jet-Printed Zinc–Tin–Oxide Thin-Film Transistors and Circuits With Rapid Thermal Annealing Process
Author :
Kim, Yong-Hoon ; Kim, Kwang-Ho ; Oh, Min Suk ; Kim, Hyun Jae ; Han, Jeong In ; Han, Min-Koo ; Park, Sung Kyu
Author_Institution :
Flexible Display Res. Center, Korea Electron. Technol. Inst., Seongnam, South Korea
Abstract :
We report on high-performance ink-jet-printed amorphous zinc-tin-oxide (a-ZTO) thin-film transistors (TFTs) and simple inverter circuits. The solution-processed a-ZTO layer was directly printed on source/drain electrodes and then thermally treated by using rapid thermal annealing process. The ink-jet-printed a-ZTO TFTs (W/L = 100 μm/10 μm) have shown a carrier mobility of 4.98 cm2/V · s with an on/off current ratio that is greater than 109 and a subthreshold slope of 0.92 V/dec. The a-ZTO TFT-based inverter operation was good with acceptable logic level conservation.
Keywords :
ink jet printing; invertors; rapid thermal annealing; thin film circuits; thin film transistors; zinc compounds; ZnSnO; carrier mobility; drain electrodes; ink-jet-printed α-ZTO TFT-based inverter operation; ink-jet-printed amorphous zinc-tin-oxide thin film transistors; inverter circuits; on/off current ratio; rapid thermal annealing process; source electrodes; subthreshold slope; thin film circuits; Ink-jet printing; rapid thermal annealing; thin-film transistor; zinc-tin-oxide;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2051404
