Ink-Jet-Printed Zinc–Tin–Oxide Thin-Film Transistors and Circuits With Rapid Thermal Annealing Process

Author

Kim, Yong-Hoon ; Kim, Kwang-Ho ; Oh, Min Suk ; Kim, Hyun Jae ; Han, Jeong In ; Han, Min-Koo ; Park, Sung Kyu

Author_Institution

Flexible Display Res. Center, Korea Electron. Technol. Inst., Seongnam, South Korea

Volume

31

Issue

8

fYear

2010

Firstpage

836

Lastpage

838

Abstract

We report on high-performance ink-jet-printed amorphous zinc-tin-oxide (a-ZTO) thin-film transistors (TFTs) and simple inverter circuits. The solution-processed a-ZTO layer was directly printed on source/drain electrodes and then thermally treated by using rapid thermal annealing process. The ink-jet-printed a-ZTO TFTs (W/L = 100 μm/10 μm) have shown a carrier mobility of 4.98 cm²/V · s with an on/off current ratio that is greater than 10⁹ and a subthreshold slope of 0.92 V/dec. The a-ZTO TFT-based inverter operation was good with acceptable logic level conservation.

Keywords

ink jet printing; invertors; rapid thermal annealing; thin film circuits; thin film transistors; zinc compounds; ZnSnO; carrier mobility; drain electrodes; ink-jet-printed α-ZTO TFT-based inverter operation; ink-jet-printed amorphous zinc-tin-oxide thin film transistors; inverter circuits; on/off current ratio; rapid thermal annealing process; source electrodes; subthreshold slope; thin film circuits; Ink-jet printing; rapid thermal annealing; thin-film transistor; zinc-tin-oxide;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2010.2051404

Filename

5503990