Title :
Ultrathin HfON Trapping Layer for Charge-Trap Memory Made by Atomic Layer Deposition
Author :
Wu, Jyun-Yi ; Chen, Yen-Ting ; Lin, Ming-Ho ; Wu, Tai-Bor
Author_Institution :
Dept. of Mater. Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Abstract :
Charge storage characteristics of a hafnium oxynitride (HfON) charge-trapping layer prepared by atomic layer deposition in a metal-Al2O3-HfON-SiO2-Si (MAHNOS) structure are investigated. We found that an ultrathin HfON (~2.5 nm) embedded in MAHNOS has large memory window (~7.5 V at Vg = ±15 V), sufficient erase speed (Δ VFB = 4 V at -16 V/1 ms), and satisfactory data retention. From the relation of erase transient current density (J) versus tunnel oxide e-field (ETUN), we also found that the erase mechanism of MAHNOS depends on electron detrapping from HfON to Si substrates. However, MAHNOS embedding with a thicker HfON shows a poor data retention due to the increase of crystallization of the trapping layer.
Keywords :
MIS structures; aluminium compounds; atomic layer deposition; elemental semiconductors; flash memories; hafnium compounds; semiconductor-insulator boundaries; silicon; silicon compounds; Al2O3-HfON-SiO2-Si; atomic layer deposition; charge storage characteristics; charge-trap memory; data retention; electron detrapping; erase speed; erase transient current density; floating-gate flash memory; tunnel oxide e-field; ultrathin trapping layer; Aluminum oxide; Argon; Atomic layer deposition; Crosstalk; Electrons; Hafnium; High K dielectric materials; High-K gate dielectrics; SONOS devices; Substrates; Atomic layer deposition (ALD); charge-trapping memory; hafnium oxynitride (HfON);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2052090
