DocumentCode :
1528983
Title :
Unipolar 
-Based Resistive Change Memory Realized With Electrode Engineering
Author :
Zhang, Lijie ; Huang, Ru ; Zhu, Minghao ; Qin, Shiqiang ; Kuang, Yongbian ; Gao, Dejin ; Shi, Congyin ; Wang, Yangyuan
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
Volume :
31
Issue :
9
fYear :
2010
Firstpage :
966
Lastpage :
968
Abstract :
In this letter, a reproducible unipolar resistive change memory (RRAM) based on TaOx was successfully fabricated through electrode design. The fabricated unipolar RRAM exhibits lower switching voltages, fast switching speed of less than 80 ns, excellent retention capabilities, and stable cycling behaviors. Moreover, the role of top-electrode material on the resistive switching mode polarity of TaOx-based RRAM was verified by comparative experiments. Analysis about the electrode effect on the resistive switching mode polarity of TaOx-based RRAM with the theory of Gibbs free energy may provide some guidelines for the design of unipolar metal-oxide-based RRAM.
Keywords :
electrodes; free energy; random-access storage; tantalum compounds; Gibbs free energy; TaOx; electrode design; electrode engineering; reproducible unipolar resistive change memory; resistive switching mode polarity; unipolar RRAM; CMOS process; CMOS technology; Design engineering; Electrodes; Fabrication; Guidelines; Switches; Tellurium; Thermal conductivity; Voltage; $ hbox{TaO}_{x}$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2010.2052091
Filename :
5503994
Link To Document :
