SEU Prediction From SET Modeling Using Multi-Node Collection in Bulk Transistors and SRAMs Down to the 65 nm Technology Node

Author

Artola, Laurent ; Hubert, Guillaume ; Warren, Kevin M. ; Gaillardin, Marc ; Schrimpf, Ronald D. ; Reed, Robert A. ; Weller, Robert A. ; Ahlbin, Jonathan R. ; Paillet, Philippe ; Raine, Melanie ; Girard, Sylvain ; Duzellier, Sophie ; Massengill, Lloyd W. ;

Author_Institution

ONERA, Toulouse, France

Volume

58

Issue

3

fYear

2011

fDate

6/1/2011 12:00:00 AM

Firstpage

1338

Lastpage

1346

Abstract

A new methodology of prediction for SEU is proposed based on SET modeling. The modeling of multi-node charge collection is performed using the ADDICT model for predicting single event transients and upsets in bulk transistors and SRAMs down to 65 nm. The predicted single event upset cross sections agree well with experimental data for SRAMs.

Keywords

SRAM chips; integrated circuit modelling; transistors; ADDICT model; SET model; SEU prediction; SRAM; advanced dynamic diffusion collection transient model; bulk transistor; multinode charge collection; single event transient model; single event upset prediction; size 65 nm; technology node; Capacitance; Current measurement; Junctions; MOSFETs; Predictive models; Transient analysis; Cross section prediction; heavy ion irradiation; multi-node collection; single event transient; single event upset; transient current model;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2011.2144622

Filename

5778956