• DocumentCode
    152903
  • Title

    High power terahertz generation from ErAs: InGaAs plasmonic photomixers

  • Author

    Berry, Christopher W. ; Hashemi, Mohammed R. ; Preu, S. ; Lu, Hai-Han ; Gossard, Arthur C. ; Jarrahi, Mona

  • Author_Institution
    Electr. Eng. & Comput. Sci. Dept., Univ. of Michigan, Ann Arbor, MI, USA
  • fYear
    2014
  • fDate
    14-19 Sept. 2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We demonstrate an ErAs:InGaAs photomixer that incorporates plasmonic contact electrodes to enhance device quantum efficiency and, thus, offers significantly higher radiation power levels compared to previously demonstrated photomixer designs pumped at 1.55 um wavelength range.
  • Keywords
    III-V semiconductors; erbium compounds; gallium arsenide; indium compounds; integrated optoelectronics; plasmonics; terahertz wave devices; terahertz wave generation; ErAs:InGaAs; device quantum efficiency; high power terahertz generation; plasmonic contact electrodes; plasmonic photomixers; radiation power levels; wavelength 1.55 mum; Electrodes; Optical device fabrication; Optical imaging; Optical mixing; Optical modulation; Optical pumping; Plasmons;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2014 39th International Conference on
  • Conference_Location
    Tucson, AZ
  • Type

    conf

  • DOI
    10.1109/IRMMW-THz.2014.6956155
  • Filename
    6956155
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=152903