Title :
High power terahertz generation from ErAs: InGaAs plasmonic photomixers
Author :
Berry, Christopher W. ; Hashemi, Mohammed R. ; Preu, S. ; Lu, Hai-Han ; Gossard, Arthur C. ; Jarrahi, Mona
Author_Institution :
Electr. Eng. & Comput. Sci. Dept., Univ. of Michigan, Ann Arbor, MI, USA
Abstract :
We demonstrate an ErAs:InGaAs photomixer that incorporates plasmonic contact electrodes to enhance device quantum efficiency and, thus, offers significantly higher radiation power levels compared to previously demonstrated photomixer designs pumped at 1.55 um wavelength range.
Keywords :
III-V semiconductors; erbium compounds; gallium arsenide; indium compounds; integrated optoelectronics; plasmonics; terahertz wave devices; terahertz wave generation; ErAs:InGaAs; device quantum efficiency; high power terahertz generation; plasmonic contact electrodes; plasmonic photomixers; radiation power levels; wavelength 1.55 mum; Electrodes; Optical device fabrication; Optical imaging; Optical mixing; Optical modulation; Optical pumping; Plasmons;
Conference_Titel :
Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2014 39th International Conference on
Conference_Location :
Tucson, AZ
DOI :
10.1109/IRMMW-THz.2014.6956155
