Title :
Fast temperature ramping Hg-vapor annealing process for fabrication of Hg-based superconducting thin films
Author :
Wu, J.Z. ; Yun, S.H. ; Gapud, A. ; Kang, B.W. ; Kang, W.N. ; Tidrow, S.C. ; Eckart, D. ; Cui, X.T. ; Chu, W.K.
Author_Institution :
Dept. of Phys. & Astron., Kansas Univ., Lawrence, KS, USA
fDate :
6/1/1997 12:00:00 AM
Abstract :
Growth mechanism of superconducting Hg-based cuprate thin films has been studied by changing the sample heating rate in Hg-vapor annealing process. A fast temperature ramping Hg-vapor annealing (FTRA) process has been found to be beneficial to the growth of high quality c-axis oriented epitaxial HgBa/sub 2/CaCu/sub 2/O/sub 6+/spl delta// films with zero-resistance T/sub c/ up to 124 K and HgBa/sub 2/Ca/sub 2/Cu/sub 3/ O/sub 8+/spl delta// films with zero-resistance T/sub c/ up to 130 K on SrTiO/sub 3/ and LaAlO/sub 3/ substrates. The high J/sub c/´s carried by these films makes them promising for many applications.
Keywords :
annealing; barium compounds; calcium compounds; critical current density (superconductivity); epitaxial growth; high-temperature superconductors; mercury compounds; superconducting epitaxial layers; superconducting thin films; superconducting transition temperature; 124 K; 130 K; HgBa/sub 2/Ca/sub 2/Cu/sub 3/O/sub 8+/spl delta// epitaxial films; HgBa/sub 2/Ca/sub 2/Cu/sub 3/O/sub 8/; HgBa/sub 2/CaCu/sub 2/O/sub 6+/spl delta// epitaxial films; HgBa/sub 2/CaCu/sub 2/O/sub 6/; LaAlO/sub 3/ substrates; annealing; critical current density; fast temperature ramping; heating rate; zero-resistance; Annealing; Chemical technology; Electromagnetic heating; Fabrication; High temperature superconductors; Substrates; Superconducting epitaxial layers; Superconducting films; Superconducting microwave devices; Superconducting thin films;
Journal_Title :
Applied Superconductivity, IEEE Transactions on
