Title :
A 3.57 Gb/s/pin Low Jitter All-Digital DLL With Dual DCC Circuit for GDDR3 DRAM in 54-nm CMOS Technology
Author :
Yun, Won-Joo ; Lee, Hyun-Woo ; Shin, Dongsuk ; Kim, Suki
Author_Institution :
Hynix Semicond. Inc., Icheon, South Korea
Abstract :
This paper presents an all digital delay-locked loop (DLL) which achieves low jitter and stable duty cycle correction (DCC) operation. Since the DLL has dual DCC circuit, with the combinations of two DCC circuits, the DLL can correct +12.9% and -6.13% duty error under 2% at 333 MHz with 1.6 V. The DLL operates up to 1.67 GHz with 1.8 V and 1.78 GHz with 2.0 V supply voltage, and its peak-to-peak jitter at 1.4 GHz with 1.8 V is 29 ps. The power dissipations are 4.2 mW (5 mW) at 100 MHz and 19.8 mW (29.5 mW) at 1 GHz with 1.5 V (1.8 V) supply voltage with the help of the update gear circuit from the previous work. And the DLL is fabricated with 54-nm DRAM CMOS technology. The active area of the DLL is 0.11 mm2.
Keywords :
CMOS memory circuits; DRAM chips; delay lock loops; jitter; CMOS technology; GDDR3 DRAM; bit rate 3.57 Gbit/s; dual DCC circuit; dual duty cycle correction circuit; frequency 1 GHz; frequency 1.4 GHz; frequency 1.67 GHz; frequency 1.78 GHz; frequency 100 MHz; frequency 333 MHz; low jitter all-digital DLL; low jitter all-digital delay-locked loop; power 19.8 mW; power 4.2 mW; size 54 nm; time 29 ps; voltage 1.5 V; voltage 1.6 V; voltage 1.8 V; voltage 2.0 V; CMOS technology; Circuits; Clocks; Delay; Detectors; Frequency; Gears; Jitter; Random access memory; Voltage; Delay-locked loop (DLL); dual duty cycle correlation (DCC); low jitter;
Journal_Title :
Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
DOI :
10.1109/TVLSI.2010.2053395
