Title :
A transient analytical model for predicting the redistribution of injected interstitials
Author :
Maldonado, Clifford D. ; Williams, Ross A.
Author_Institution :
Rockwell Int. Corp., Newport Beach, CA, USA
fDate :
8/1/1990 12:00:00 AM
Abstract :
A general formal transient solution to the linear boundary value problem which governs the transport of interstitials injected into an arbitrary bounded domain from oxidizing segments on the surface is presented. An explicit expression for the Green´s function which appears as the kernel in the integral representation of the general transient solution is given for a simple domain of interest in the study of oxidation-enhanced diffusion (OED). By combining this explicit expression for the Green´s function with the general formal solution, a transient analytical model for predicting the redistribution of interstitials injected into the simple domain from a single oxidizing segment is obtained. An illustrated example important to OED is considered and results obtained with the model and by approximations to the model are compared. Also, the results obtained with the SUPREM-IV program are presented for comparison
Keywords :
digital simulation; doping profiles; electronic engineering computing; semiconductor doping; semiconductor technology; Green´s function; OED; SUPREM-IV program; arbitrary bounded domain; explicit expression; general formal transient solution; linear boundary value problem; oxidation-enhanced diffusion; oxidizing segments; redistribution of injected interstitials; semiconductor process modelling; transient analytical model; transport of interstitials injected; Analytical models; Anisotropic magnetoresistance; Boundary value problems; Electrical resistance measurement; Equations; Kinetic theory; Oxidation; Semiconductor process modeling; Transient analysis; Two dimensional displays;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on