0.99 mW 3-10 GHz common-gate CMOS UWB LNA using T-match input network and self-body-bias technique

A low-power 3-10-GHz common-gate CMOS ultra-wideband (UWB) low-noise amplifier (LNA) using a T-match input network and the self-body-bias technique is demonstrated. Wideband input impedance matching was achieved by using the proposed T-match input network to improve the input matching at low frequencies. A low supply voltage of 1.1-V (for two V_DS drops) was achieved by using the self-body-bias technique to reduce the threshold voltage (V_th) of the transistors, which leads to a low power consumption (P_D). At V_G=0.77=V, the LNA consumed 2.15=mW and achieved S₁₁ of -10.4 to -35.5-dB, S₂₁ of 10.4 dB, and an average NF of 4.9 dB over the 3 10 GHz band of interest. At V_G=0.63=V, the LNA consumed 0.99=mW and achieved S₁₁ of -10.7 to -35.8-dB, S₂₁ of 7.9 dB and an average NF of 6 dB. Both are the lowest P_D ever reported for an UWB CMOS LNA with bandwidth greater than 6 GHz.