Title :
Fully-integrated concurrent dual-band CMOS power amplifier with switchless matching network
Author :
Yoon, Yong Soo ; Kim, Heonhwan ; Cha, Jaehyuk ; Lee, Onyou ; Kim, Hak S. ; Kim, Wonhee ; Lee, Chia-Han ; Laskar, J.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
Presented is a fully-integrated 2.45/3.8 GHz concurrent dual-band CMOS power amplifier (PA) with a switchless matching network. The area of the PA is 1.46×0.7 mm2, and it is fabricated in a 0.18 μm RF CMOS process. It uses a supply voltage of 3.3 V. The measured maximum output power and drain efficiency of the dual-band PA are 23.4 dBm and 42 at 2.45 GHz and 24.5 dBm and 39 at 3.8 GHz, respectively.
Keywords :
CMOS analogue integrated circuits; UHF power amplifiers; microwave power amplifiers; RF CMOS process; drain efficiency; frequency 2.45 GHz; frequency 3.8 GHz; fully-integrated concurrent dual-band CMOS power amplifier; maximum output power; size 0.18 mum; switchless matching network; voltage 3.3 V;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2011.0663
