• DocumentCode
    1529612
  • Title

    Fully-integrated concurrent dual-band CMOS power amplifier with switchless matching network

  • Author

    Yoon, Yong Soo ; Kim, Heonhwan ; Cha, Jaehyuk ; Lee, Onyou ; Kim, Hak S. ; Kim, Wonhee ; Lee, Chia-Han ; Laskar, J.

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
  • Volume
    47
  • Issue
    11
  • fYear
    2011
  • Firstpage
    659
  • Lastpage
    661
  • Abstract
    Presented is a fully-integrated 2.45/3.8 GHz concurrent dual-band CMOS power amplifier (PA) with a switchless matching network. The area of the PA is 1.46×0.7 mm2, and it is fabricated in a 0.18 μm RF CMOS process. It uses a supply voltage of 3.3 V. The measured maximum output power and drain efficiency of the dual-band PA are 23.4 dBm and 42 at 2.45 GHz and 24.5 dBm and 39 at 3.8 GHz, respectively.
  • Keywords
    CMOS analogue integrated circuits; UHF power amplifiers; microwave power amplifiers; RF CMOS process; drain efficiency; frequency 2.45 GHz; frequency 3.8 GHz; fully-integrated concurrent dual-band CMOS power amplifier; maximum output power; size 0.18 mum; switchless matching network; voltage 3.3 V;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2011.0663
  • Filename
    5779501
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1529612