Title :
Doping effect on shift of threshold voltage of graphene-based field-effect transistors
Author :
Guo, Bo ; Fang, Lisheng ; Zhang, Boming ; Gong, J.R.
Author_Institution :
Dept. of Appl. Phys., Chongqing Univ., Chongqing, China
Abstract :
A method of controllable doping by ion irradiation in reduced graphene oxide (RGO) is presented, and the threshold voltage of the RGO-based field-effect transistor can be finely tuned in the range from more than 30 V to about -20 V using this approach. Evidence of doping was also provided by Raman spectroscopy and Fourier transform infrared spectroscopy.
Keywords :
Fourier transform spectra; Raman spectroscopy; field effect transistors; graphene; infrared spectra; semiconductor doping; C; Fourier transform infrared spectroscopy; Raman spectroscopy; controllable doping; doping effect; graphene-based field-effect transistor; ion irradiation; reduced graphene oxide; threshold voltage;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2011.0770
