Wafer-bonded bottom-emitting 850-nm VCSEL´s on GaP substrates

Author

Chao-Kun Lin ; Sang-Wan Ryu ; Won-Jin Choi ; Dapkus, P.D.

Author_Institution

Dept. of Electr. Eng.-Electrophys., Univ. of Southern California, Los Angeles, CA, USA

Volume

11

Issue

8

fYear

1999

Firstpage

937

Lastpage

939

Abstract

Bottom-emitting 850-nm vertical-cavity surface-emitting lasers were fabricated using wafer bonding technology to replace the absorbing GaAs substrates with transparent GaP substrates. Ohmic-like p-type GaAs-GaP bonded interfaces were obtained with proper bonding condition. The devices with 4×4 μm² current aperture exhibit 24% external quantum efficiency, and threshold current as low as 400 μA. The threshold voltages range from 1.71 to 1.8 V for different aperture size devices.

Keywords

laser transitions; optical fabrication; semiconductor lasers; surface emitting lasers; wafer bonding; 1.71 to 1.8 V; 24 percent; 400 muA; 850 nm; GaAs; GaAs-GaP; GaP; GaP substrates; absorbing GaAs substrates; aperture size devices; bonding condition; current aperture; external quantum efficiency; ohmic-like p-type GaAs-GaP bonded interfaces; threshold current; threshold voltages; transparent GaP substrates; vertical-cavity surface-emitting laser; wafer bonding technology; wafer-bonded bottom-emitting 850-nm VCSEL; Apertures; Etching; Fabrication; Gallium arsenide; Optical surface waves; Semiconductor lasers; Substrates; Surface emitting lasers; Vertical cavity surface emitting lasers; Wafer bonding;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.775305

Filename

775305