1.17-μm highly strained GaInAs-GaAs quantum-well laser

Author

Schlenker, D. ; Miyamoto, T. ; Chen, Z. ; Koyama, F. ; Iga, K.

Author_Institution

Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama, Japan

Volume

11

Issue

8

fYear

1999

Firstpage

946

Lastpage

948

Abstract

Excellent lasing properties and temperature characteristic of a highly strained 1.17-μm GaInAs-GaAs double-quantum-well laser are reported. We show that a strained buffer layer, which is employed in the device, has no tradeoff on the device performance. For a 1500-μm-long laser with cleaved facets a threshold current density of 200 A/cm² is achieved. A transparency current density of 180 A/cm² is estimated for as cleaved devices. A record high characteristic temperature in this wavelength range of 150 K is achieved.

Keywords

III-V semiconductors; current density; gallium arsenide; indium compounds; laser transitions; quantum well lasers; transparency; 1.17 mum; 150 K; 1500 mum; GaInAs-GaAs; cleaved devices; cleaved facets; device performance; high characteristic temperature; highly strained GaInAs-GaAs quantum-well laser; lasing properties; strained buffer layer; temperature characteristic; threshold current density; transparency current density; Buffer layers; Epitaxial growth; Epitaxial layers; Fiber lasers; Gallium arsenide; Optical materials; Quantum well lasers; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.775308

Filename

775308