Title :
Atomic ordering and coercivity mechanism in FePt and CoPt polycrystalline thin films
Author :
Jeong, Sangki ; Hsu, Yu-Nu ; Laughlin, David E. ; McHenry, Michael E.
Author_Institution :
Dept. of Mater. Sci. & Eng., Carnegie Mellon Univ., Pittsburgh, PA, USA
fDate :
7/1/2001 12:00:00 AM
Abstract :
40 nm thick CoPt and FePt films were prepared on oxidized Si substrates with 10 nm MgO underlayers. The maximum coercivity (Hc ) for CoPt films was found to be ~10 kOe after annealing at 700°C for ~20-30 minutes (min). Structural analysis showed a significant amount of FCC phase as well as the ordered L10 phase in these films. FePt films showed an abrupt increase of ordered volume fraction and Hc in the initial stage of annealing and predominance of the tetragonal L10 phase after 10 min. at 700°C. The maximum Hc reached ~16 kOe after annealing at 700°C for more than 20 minutes. Dark field (DF) images of the annealed CoPt films showed individual grains which exhibited a possibility of several variants or disordered phase with dimensions similar to the exchange correlation length, bcm. The temperature dependence of Hc seems to indicate a weak pinning mechanism in the highly ordered FePt films. Magnetic force microscopy indicated a complex domain structure consisting of clusters with dimensions of several hundred nanometers
Keywords :
annealing; cobalt alloys; coercive force; exchange interactions (electron); iron alloys; magnetic domains; magnetic force microscopy; magnetic thin films; platinum alloys; 700 C; CoPt; CoPt polycrystalline thin film; FCC phase; FePt; FePt polycrystalline thin film; MgO underlayer; Si substrate; annealing; atomic ordering; coercivity; dark field imaging; disordered phase; domain pinning; domain structure; exchange correlation length; magnetic force microscopy; structural analysis; tetragonal L10 phase; volume fraction; Annealing; Atomic force microscopy; Coercive force; Magnetic anisotropy; Magnetic devices; Magnetic films; Magnetic force microscopy; Magnetic forces; Perpendicular magnetic anisotropy; Transistors;
Journal_Title :
Magnetics, IEEE Transactions on