DocumentCode :
1529822
Title :
Fabrication of ultracompact 3-dB 2 x 2 MMI power splitters
Author :
Levy, David S. ; Park, Kyung Hyun ; Scarmozzino, Robert ; Osgood, Richard M., Jr. ; Dries, Chris ; Studenkov, Pavel ; Forrest, Stephen
Author_Institution :
Microelectron. Sci. Lab., Columbia Univ., New York, NY, USA
Volume :
11
Issue :
8
fYear :
1999
Firstpage :
1009
Lastpage :
1011
Abstract :
Recently proposed tapered MMI devices have been shown to allow for substantial reductions in device geometries, but as of this time such ultracompact devices have not been realized. The fabrication and testing of a series of parabolically tapered 3-dB 2/spl times/2 MMI devices have been accomplished in the InP-InGaAsP double heterostructure system. The results validate previous predictions and yield device geometries about 40% smaller than the shortest previous 3-dB 2/spl times/2 MMI device. The measured splitting ratios of these devices are compared to the results of numerous beam propagation method simulations, based on the finite-difference method, and good correlation is obtained.
Keywords :
III-V semiconductors; finite difference methods; gallium arsenide; gallium compounds; indium compounds; integrated optics; light interference; optical beam splitters; optical fabrication; optical testing; InP-InGaAsP; InP-InGaAsP double heterostructure; beam propagation method simulations; device geometries; finite-difference method; multimode interference; parabolically tapered 3-dB 2/spl times/2 MMI devices; splitting ratios; tapered MMI devices; ultracompact 3-dB 2/spl times/2 MMI power splitter fabrication; ultracompact devices; Circuits; Couplers; Fabrication; Finite difference methods; Geometry; Laboratories; Microelectronics; Optical imaging; Optical interferometry; Optical waveguides;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/68.775329
Filename :
775329
Link To Document :
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