Title :
Comparison of Synthetic Antiferromagnets and Hard Ferromagnets as Reference Layer in Magnetic Tunnel Junctions With Perpendicular Magnetic Anisotropy
Author :
Bandiera, S. ; Sousa, R.C. ; Dahmane, Y. ; Ducruet, C. ; Portemont, Celine ; Baltz, V. ; Auffret, S. ; Prejbeanu, Ioan L. ; Dieny, B.
Author_Institution :
SPINTEC, UJF, Grenoble, France
fDate :
7/2/1905 12:00:00 AM
Abstract :
In magnetic tunnel junctions (MTJ), synthetic antiferromagnets (SAF) are usually used as reference layer to minimize dipolar interactions induced between this layer and the free layer (FL). We show here that the use of SAF allows us to reduce the asymmetry of the FL reversal due to stray fields in nanosized MTJs with perpendicular magnetic anisotropy.
Keywords :
antiferromagnetic materials; ferromagnetic materials; magnetic tunnelling; nanostructured materials; perpendicular magnetic anisotropy; dipolar interactions; hard ferromagnets; magnetic tunnel junctions; nanosized; perpendicular magnetic anisotropy; stray fields; synthetic antiferromagnets; Antiferromagnetic materials; Current density; Electrical resistance measurement; Magnetic field measurement; Magnetic hysteresis; Magnetic multilayers; Magnetic tunneling; Perpendicular magnetic anisotropy; Random access memory; Tunneling magnetoresistance; Co/Pt multilayers; Spin electronics; dipolar interaction; magnetic tunnel junction (MTJ); magnetoresistive random access memory (MRAM); perpendicular magnetic anisotropy (PMA); tunneling magnetoresistance;
Journal_Title :
Magnetics Letters, IEEE
DOI :
10.1109/LMAG.2010.2052238
