Comparison of Synthetic Antiferromagnets and Hard Ferromagnets as Reference Layer in Magnetic Tunnel Junctions With Perpendicular Magnetic Anisotropy

Author

Bandiera, S. ; Sousa, R.C. ; Dahmane, Y. ; Ducruet, C. ; Portemont, Celine ; Baltz, V. ; Auffret, S. ; Prejbeanu, Ioan L. ; Dieny, B.

Author_Institution

SPINTEC, UJF, Grenoble, France

Volume

1

fYear

2010

fDate

7/2/1905 12:00:00 AM

Firstpage

3000204

Lastpage

3000204

Abstract

In magnetic tunnel junctions (MTJ), synthetic antiferromagnets (SAF) are usually used as reference layer to minimize dipolar interactions induced between this layer and the free layer (FL). We show here that the use of SAF allows us to reduce the asymmetry of the FL reversal due to stray fields in nanosized MTJs with perpendicular magnetic anisotropy.

Keywords

antiferromagnetic materials; ferromagnetic materials; magnetic tunnelling; nanostructured materials; perpendicular magnetic anisotropy; dipolar interactions; hard ferromagnets; magnetic tunnel junctions; nanosized; perpendicular magnetic anisotropy; stray fields; synthetic antiferromagnets; Antiferromagnetic materials; Current density; Electrical resistance measurement; Magnetic field measurement; Magnetic hysteresis; Magnetic multilayers; Magnetic tunneling; Perpendicular magnetic anisotropy; Random access memory; Tunneling magnetoresistance; Co/Pt multilayers; Spin electronics; dipolar interaction; magnetic tunnel junction (MTJ); magnetoresistive random access memory (MRAM); perpendicular magnetic anisotropy (PMA); tunneling magnetoresistance;

fLanguage

English

Journal_Title

Magnetics Letters, IEEE

Publisher

ieee

ISSN

1949-307X

Type

jour

DOI

10.1109/LMAG.2010.2052238

Filename

5504576