Title :
Perpendicular anisotropy in a-CoGdZr films, induced by HDC applied during deposition
Author :
Shin, D.H. ; Niedoba, H. ; Suran, G.
Author_Institution :
Lab. Louis Neel, CNRS, Grenoble, France
fDate :
7/1/2001 12:00:00 AM
Abstract :
When amorphous Co95-xZr5Gdx films are prepared by RF sputtering in presence of a DC field applied parallel to the film plane, a perpendicular anisotropy Kp is obtained for 0<x<25 and an in-plane one Ku for x>28. A substrate holder with a specific configuration is used. Its´ interest Is explained in detail. The values of Kp and Ku are determined by the pressure of the sputter gas PAr. When 18<x<25 one obtains Q>1, for an optimal PAr. The results are explained by a spin reorientation process
Keywords :
amorphous magnetic materials; cobalt alloys; gadolinium alloys; magnetic thin films; perpendicular magnetic anisotropy; perpendicular magnetic recording; spin dynamics; sputter deposition; sputtered coatings; storage media; zirconium alloys; CoGdZr; DC field; RF sputtering; a-CoGdZr films; amorphous Co95-xZr5Gdx films; perpendicular anisotropy; spin reorientation process; sputter gas pressure; substrate holder; Amorphous materials; Anisotropic magnetoresistance; Fabrication; Helium; Magnetic anisotropy; Magnetic films; Plasma temperature; Sputtering; Substrates; Zirconium;
Journal_Title :
Magnetics, IEEE Transactions on
