DocumentCode :
1530086
Title :
High-Responsivity Solar-Blind Photodetector Based on  \\hbox {Mg}_{0.46}\\hbox {Zn}_{0.54}\\hbox {O} Thin Film
Author :
Zheng, Qinghong ; Huang, Feng ; Huang, Jin ; Hu, Qichan ; Chen, Dagui ; Ding, Kai
Author_Institution :
Key Lab. of Optoelectron. Mater. Chem. & Phys., Fujian Inst. of Res. on the Struct. of Matter, Fuzhou, China
Volume :
33
Issue :
7
fYear :
2012
fDate :
7/1/2012 12:00:00 AM
Firstpage :
1033
Lastpage :
1035
Abstract :
Adopting relatively high substrate temperature and low growth rate, single-phase wurtzite Mg0.46Zn0.54O film is grown on a quartz substrate by homemade magnetron sputtering. Solar-blind photodetector is fabricated based on the MgZnO film and shows a peak responsivity of 3.4 A/W at 265 nm with a cutoff wavelength of 280 nm under 10 V. As applied voltage increased to 70 V, the peak responsivity is up to 31.1 A/W corresponding to an internal gain of 148 times. The large internal gain was attributed to the trapping of photoionized holes at Ev + 282 meV deep level through deep-level transient spectral measurement.
Keywords :
magnesium compounds; photodetectors; quartz; sputtering; thin film devices; zinc compounds; Mg0.46Zn0.54O; deep-level transient spectral measurement; electron volt energy 282 meV; high-responsivity solar-blind photodetector; homemade magnetron sputtering; low growth rate; photoionized holes; quartz substrate; relatively high substrate temperature; single-phase wurtzite thin film; voltage 10 V; voltage 70 V; wavelength 280 nm; Charge carrier processes; Gain measurement; Photodetectors; Sputtering; Substrates; Zinc oxide; Metal–semiconductor–metal (MSM); MgZnO; photoconductive gain; solar-blind photodetector (SBPD);
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2012.2196675
Filename :
6210357
Link To Document :
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