Title :
InP HEMT for sub-millimeter wave space applications: Status and challenges
Author_Institution :
Northrop Grumman Corp., Redondo Beach, CA, USA
Abstract :
InP HEMT technology has long had a place in both civil and defense space applications, particularly at millimeter wavelengths where it´s high speed and low DC power provide clear benefits. With a new generation of transistor showing fMAX > 1.2 and integrated circuits operating frequencies reaching 850 GHz, new performance levels and applications become possible. This talk will provide a status of capabilities and technology readiness, as well as emerging applications.
Keywords :
III-V semiconductors; aerospace engineering; high electron mobility transistors; indium compounds; submillimetre wave transistors; HEMT; InP; civil space application; defense space application; frequency 850 GHz; integrated circuit; submillimeter wave space application; transistor; HEMTs; Indium phosphide; MMICs; Microwave radiometry; Noise; Receivers;
Conference_Titel :
Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2014 39th International Conference on
Conference_Location :
Tucson, AZ
DOI :
10.1109/IRMMW-THz.2014.6956216