DocumentCode :
153025
Title :
InP HEMT for sub-millimeter wave space applications: Status and challenges
Author :
Deal, W.R.
Author_Institution :
Northrop Grumman Corp., Redondo Beach, CA, USA
fYear :
2014
fDate :
14-19 Sept. 2014
Firstpage :
1
Lastpage :
3
Abstract :
InP HEMT technology has long had a place in both civil and defense space applications, particularly at millimeter wavelengths where it´s high speed and low DC power provide clear benefits. With a new generation of transistor showing fMAX > 1.2 and integrated circuits operating frequencies reaching 850 GHz, new performance levels and applications become possible. This talk will provide a status of capabilities and technology readiness, as well as emerging applications.
Keywords :
III-V semiconductors; aerospace engineering; high electron mobility transistors; indium compounds; submillimetre wave transistors; HEMT; InP; civil space application; defense space application; frequency 850 GHz; integrated circuit; submillimeter wave space application; transistor; HEMTs; Indium phosphide; MMICs; Microwave radiometry; Noise; Receivers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2014 39th International Conference on
Conference_Location :
Tucson, AZ
Type :
conf
DOI :
10.1109/IRMMW-THz.2014.6956216
Filename :
6956216
Link To Document :
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