• DocumentCode
    153025
  • Title

    InP HEMT for sub-millimeter wave space applications: Status and challenges

  • Author

    Deal, W.R.

  • Author_Institution
    Northrop Grumman Corp., Redondo Beach, CA, USA
  • fYear
    2014
  • fDate
    14-19 Sept. 2014
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    InP HEMT technology has long had a place in both civil and defense space applications, particularly at millimeter wavelengths where it´s high speed and low DC power provide clear benefits. With a new generation of transistor showing fMAX > 1.2 and integrated circuits operating frequencies reaching 850 GHz, new performance levels and applications become possible. This talk will provide a status of capabilities and technology readiness, as well as emerging applications.
  • Keywords
    III-V semiconductors; aerospace engineering; high electron mobility transistors; indium compounds; submillimetre wave transistors; HEMT; InP; civil space application; defense space application; frequency 850 GHz; integrated circuit; submillimeter wave space application; transistor; HEMTs; Indium phosphide; MMICs; Microwave radiometry; Noise; Receivers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2014 39th International Conference on
  • Conference_Location
    Tucson, AZ
  • Type

    conf

  • DOI
    10.1109/IRMMW-THz.2014.6956216
  • Filename
    6956216
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=153025