Title :
RF low-noise amplifiers in BiCMOS technologies
Author :
Carreto-Castro, Flora ; Silva-Martinez, Jose ; Murphy-Arteaga, Roberto
Author_Institution :
Integrated Circuits Design Group, Nat. Inst. for Astrophys. Optics & Electron., Puebla, Mexico
fDate :
7/1/1999 12:00:00 AM
Abstract :
This paper deals with the design of low-noise amplifiers (LNA) fabricated in BiCMOS technologies. The LNA´s are based on an active inductor, which makes the topologies less sensitive to temperature variations and reduces the effects of process parameter tolerances. Experimental results show a 10-dB voltage gain at 1 GHz and unity-gain frequencies of 3.6 GHz. The noise figure, measured at 1 GHz, is 3.4 dB. The preamplifier has been fabricated using a 10-GHz BiCMOS technology
Keywords :
BiCMOS analogue integrated circuits; MMIC amplifiers; UHF amplifiers; UHF integrated circuits; inductors; 1 GHz; 10 dB; 3.4 dB; BiCMOS technologies; RF low-noise amplifiers; active inductor; process parameter tolerances; temperature variations; unity-gain frequencies; voltage gain; Active inductors; BiCMOS integrated circuits; Low-noise amplifiers; Noise figure; Noise measurement; Preamplifiers; Radio frequency; Temperature sensors; Topology; Voltage;
Journal_Title :
Circuits and Systems II: Analog and Digital Signal Processing, IEEE Transactions on
