• DocumentCode
    1530297
  • Title

    Spatial Mapping of the Dirac Point in Monolayer and Bilayer Graphene

  • Author

    Deshpande, Aparna ; Bao, Wenzhong ; Zhao, Zeng ; Lau, Chun Ning ; LeRoy, Brian

  • Author_Institution
    Dept. of Phys., Univ. of Arizona, Tucson, AZ, USA
  • Volume
    10
  • Issue
    1
  • fYear
    2011
  • Firstpage
    88
  • Lastpage
    91
  • Abstract
    We have mapped the Dirac point in exfoliated monolayer and bilayer graphene using spatially resolved scanning tunneling spectroscopy measurements at low temperature. The Dirac-point shifts in energy at different locations in graphene. However, a cross correlation with the topography shows no correlation indicating that topographic features, such as ripples are not the primary source of the variation. Rather, we attribute the shift of the Dirac point to random charged impurities located near the graphene. Our findings emphasize the need to advance exfoliated graphene sample preparation to minimize the effect of impurities.
  • Keywords
    elemental semiconductors; graphene; impurities; monolayers; nanostructured materials; narrow band gap semiconductors; random processes; scanning tunnelling spectroscopy; semiconductor doping; surface topography; C:Jk; Dirac point; bilayer graphene; gapless semiconductors; monolayer graphene; random charged impurities; spatially resolved scanning tunneling spectroscopy; surface topography; Dirac point; graphene; scanning tunneling microscope (STM); spectroscopy;
  • fLanguage
    English
  • Journal_Title
    Nanotechnology, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1536-125X
  • Type

    jour

  • DOI
    10.1109/TNANO.2010.2057256
  • Filename
    5504843