Title :
A Radiation Hard Digital Monolithic Pixel Sensor for the EUDET-JRA1 Project
Author :
Orsini, Fabienne ; Baudot, Jerome ; Bertolone, Gregory ; Brogna, Andrea ; Claus, Gilles ; Colledani, Claude ; De Masi, Rita ; Degerli, Yavuz ; Dorokhov, Andrei ; Dulinski, Wojciech ; Gelin, Marie ; Goffe, Mathieu ; Guilloux, Fabrice ; Himmi, Abdelkader ;
Author_Institution :
DSM, CEA Saclay, Gif-sur-Yvette, France
Abstract :
In the framework of the EUDET-JRA1 project (European Detector R&D towards the International Linear Collider), which consists of design, realization and implantation of a high resolution beam digital telescope, based on Monolithic Active Pixel Sensors (MAPS), an intermediate digital chip sensor, MIMOSA22, has already been delivered with good detection performances. Although this intermediate chip has fulfilled all the initial requirements of the project, it was admitted that radiation tolerance behavior of the sensor could be improved, especially if the high precision telescope is used later in a hadron testbeam infrastructure. For this purpose, a new version of the sensor, MIMOSA22-BIS, has been designed, with several improved pixel architectures, and using the same AMS 0.35 μm opto process of the sensor MIMOSA22. This paper will be focused on tests performed in laboratory conditions using a 55Fe source, and tests performed in CERN-SPS, using a 120 GeV pion beam, in order to characterize detection performances of the chip with MIPs, before and after ionizing irradiation.
Keywords :
CMOS image sensors; position sensitive particle detectors; radiation hardening; readout electronics; silicon radiation detectors; 55Fe source; AMS 0.35 mum optoprocess; EUDET-JRA1 Project; MIMOSA22; MIMOSA22-BIS; Monolithic Active Pixel Sensors; beam digital telescope; hadron testbeam infrastructure; ionizing irradiation; pion beam; radiation hard digital monolithic pixel sensor; CMOS sensor; position sensitive particle detectors; radiation hardening; solid state tracking detectors;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2010.2050148