DocumentCode :
153058
Title :
On the power dependence of 1.5 μm excitation of low-temperature-grown GaAs photoconductive antennas
Author :
Jougataki, Kohei ; Tomiyasu, Yuki ; Hirao, Yuya ; Tominaga, Yoriko ; Kadoya, Yutaka
Author_Institution :
Hiroshima Univ., Higashi-Hiroshima, Japan
fYear :
2014
fDate :
14-19 Sept. 2014
Firstpage :
1
Lastpage :
2
Abstract :
The mechanism of the halfway power dependence Pn with 1<;n<;2 in the 1.5 μm excitation of low-temperature-grown GaAs was investigated and found to be well accounted for by a transition from linear to quadratic response.
Keywords :
III-V semiconductors; antennas; gallium arsenide; photoconducting devices; GaAs; halfway power dependence mechanism; low-temperature-grown photoconductive antennas; wavelength 1.5 mum; Absorption; Antennas; Detectors; Gallium arsenide; Measurement by laser beam; Photoconductivity; Principal component analysis;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2014 39th International Conference on
Conference_Location :
Tucson, AZ
Type :
conf
DOI :
10.1109/IRMMW-THz.2014.6956234
Filename :
6956234
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=153058
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