Title :
An integrated heterojunction bipolar transistor cascode opto-electronic mixer
Author :
Betser, Yoram ; Lasri, Jacob ; Sidorov, Victor ; Cohen, Shimon ; Ritter, Dan ; Orentstein, M. ; Eisentstein, G. ; Seeds, Alwyn J. ; Madjar, Asher
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fDate :
7/1/1999 12:00:00 AM
Abstract :
An integrated electrically pumped opto-electronic mixer consisting of two InP-GaInAs heterojunction bipolar transistors in a cascode configuration is demonstrated. Intrinsic down-conversion gains of 18.2 and 8.9 dB at RF optical modulation frequencies of 3 and 9.5 GHz were obtained. The performance of the cascode mixer and a single heterojunction bipolar transistor (HBT) opto-electronic mixer are compared. The performance of the cascode mixer was superior to the single HBT mixer, mainly at high frequencies. Up and down mixing conversion gains were measured and found comparable. A simulation was carried out by solving the nonlinear differential equations that correspond to the large-signal equivalent circuit. The results of the simulation enabled us to identify the principal nonlinear components in the equivalent circuit
Keywords :
III-V semiconductors; equivalent circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated optoelectronics; microwave mixers; microwave photonics; nonlinear differential equations; 18.2 dB; 3 GHz; 8.9 dB; 9.5 GHz; InP-GaInAs; InP-GaInAs HBTs; RF optical modulation frequencies; cascode configuration; down-conversion gains; electrically pumped opto-electronic mixer; heterojunction bipolar transistor; integrated HBT cascode optoelectronic mixer; large-signal equivalent circuit; nonlinear differential equations; Epitaxial layers; Equivalent circuits; Frequency; Heterojunction bipolar transistors; Indium phosphide; Mixers; Nonlinear optics; Optical mixing; Optical pumping; Optical sensors;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
