Properties of heavily irradiated mosfets

Studies of channel mobility reduction in P channel MOSFETS with gamma and/or neutron irradiation are reported. For pure gamma irradiation, the reduction in mobility is caused by increased surface charge scattering. The surface charge scattering mobility is found to have a temperature and surface charge dependence of T^−0.5/NSC. For pure neutron irradiation, the reduction in channel mobility arises from scattering at neutron-produced bulk-centers. In reactor neutron irradiations, gamma fluence can be as important as the neutron fluence in reducing channel mobility.