Title :
Characteristics of single- and two-dimensional phase coupled arrays of vertical cavity surface emitting GaAs-AlGaAs lasers
Author :
Van Der Ziel, Jan P. ; Deppe, Dennis G. ; Chand, Naresh ; Zydzik, George J. ; Chu, Sung Nee George
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
fDate :
11/1/1990 12:00:00 AM
Abstract :
Two-dimensional arrays of 3×3 vertical cavity surface emitting GaAs-AlGaAs lasers with 7-μm center spacing are described. The lasers were grown by molecular beam epitaxy and contain one grown GaAs-AlAs mirror under the active layer and a second, thermally deposited, high-reflectivity, SiO2-Si mirror on top of the epitaxial layer. The array has a 295-K threshold of 90 mA, corresponding to 10 mA per laser. The individual lasers in the array have Gaussian beam profiles both spatially in the near field and angularly in the far field. When all the lasers in the array are operating in a coupled manner, the emission exhibits a lobed far-field pattern with a 5° separation in the direction parallel to the contact edge and a 2.5° separation perpendicular to the contact edge
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor laser arrays; Gaussian beam profiles; III-V semiconductors; active layer; angularly; center spacing; contact edge; grown GaAs-AlAs mirror; lobed far-field pattern; molecular beam epitaxy; near field; parallel; perpendicular; separation; single dimensional phase coupled arrays; spatially; thermally deposited high reflectivity SiO2-Si mirror; threshold; two-dimensional phase coupled arrays; vertical cavity surface emitting GaAs-AlGaAs lasers; Laser modes; Mirrors; Molecular beam epitaxial growth; Optical arrays; Optical coupling; Optical design; Phased arrays; Stimulated emission; Surface emitting lasers; Vertical cavity surface emitting lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
