• DocumentCode
    1530949
  • Title

    Mutual injection-locking properties of monolithically-integrated surface-emitting multiple-quantum-well distributed feedback lasers

  • Author

    Noda, Susumu ; Kojima, Keisuke ; Kyuma, Kazuo

  • Author_Institution
    Mitsubishi Electric Corp., Hyoyo, Japan
  • Volume
    26
  • Issue
    11
  • fYear
    1990
  • fDate
    11/1/1990 12:00:00 AM
  • Firstpage
    1883
  • Lastpage
    1894
  • Abstract
    The mutual injection-locking properties of a coupled pair of multiple-quantum-well distributed-feedback lasers with grating output couplers were investigated experimentally and theoretically. When the mutual injection locking occurred, the output of one laser decreased while that of the other increased. The locking curve was asymmetric, and a stable and an unstable locking region existed. From the theoretical analysis, it was found that the phase delay with which the electric field emitted from each laser to the other laser significantly influences the locking characteristics. The increase and decrease of the locked output power are caused by the phase delay. It is also shown that the laser which receives the larger optical injection behaves like a slave laser and the laser which has less optical injection behaves like a master laser, and the shape of the locking curve is determined by the balance between the α parameter and the thermal resistance
  • Keywords
    distributed feedback lasers; integrated optoelectronics; semiconductor junction lasers; semiconductor quantum wells; asymmetric; coupled pair; electric field; grating output couplers; locked output power; locking characteristics; locking curve; master laser; monolithically-integrated surface-emitting multiple-quantum-well distributed feedback lasers; mutual injection-locking properties; optical injection; phase delay; shape; slave laser; theoretical analysis; thermal resistance; unstable locking region; Couplers; Delay; Gratings; Injection-locked oscillators; Laser theory; Mutual coupling; Optical coupling; Power generation; Quantum well devices; Thermal resistance;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/3.62107
  • Filename
    62107