Double-active-layer index-guided InGaAsP-InP laser diode

Author

Kajanto, Markus ; Chen, T.R. ; Zhuang, Y.H. ; Yariv, Amnon

Author_Institution

Dept. of Appl. Phys., California Inst. of Technol., Pasadena, CA, USA

Volume

26

Issue

11

fYear

1990

fDate

11/1/1990 12:00:00 AM

Firstpage

1895

Lastpage

1900

Abstract

A buried crescent InGaAsP-InP laser with two active layers was fabricated to study the temperature behavior of the double-carrier-confinement structure. An anomalously high characteristic temperature T₀ was measured, and optical switching behavior was observed. A mode analysis and numerical calculation using a rate equation approach explained qualitatively very well the experimental results. It was revealed that both the Auger recombination in this special double-active-layer configuration and the temperature-dependent leakage current, which leads to uniform carrier distribution in both active regions, are essential to increase T₀

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; semiconductor junction lasers; Auger recombination; III-V semiconductors; buried crescent InGaAsP-InP laser; characteristic temperature; double active layer index guided InGaAsP-InP laser diode; double-active-layer configuration; double-carrier-confinement structure; mode analysis; numerical calculation; optical switching behavior; rate equation approach; temperature behavior; temperature-dependent leakage current; uniform carrier distribution; Diode lasers; Laser theory; Laser transitions; Nonlinear optics; Optical device fabrication; Physics; Scanning electron microscopy; Substrates; Temperature measurement; Threshold current;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.62108

Filename

62108