Title :
Siucon-on-sapphire device photoconduction predictions
Author_Institution :
Rockwell International Corporation Anaheim, California
Abstract :
The linear sapphire photoconductance approximation was used to model dose-rate effects in CMOS/SOS inverters. From this model, optimum values were derived for the ratio of n-channel to p-channel transistor gate width, thereby maximizing the dose-rate failure threshold.
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1974.6498931
