Title :
Thermal variations in switching fields for sub-micron MRAM cells
Author :
Bhattacharyya, Manoj ; Anthony, Thomas ; Nickel, Janice ; Sharma, Manish ; Tran, Lung ; Walmsley, Robert
Author_Institution :
Hewlett-Packard Labs., Palo Alto, CA, USA
fDate :
7/1/2001 12:00:00 AM
Abstract :
Thermal effects in switching of sub-micron tunnel junctions are investigated. The switching field is shown to he inversely dependent on temperature, and switching field jitter is shown to be strong function of temperature. Micromagnetic modeling is used to understand thermal effects. In some instances a stability factor (defined as KV/kT) of 100 or more may be required for acceptable switching field jitter, while with proper optimization of FM layers, stability factors of 50 or 60 may suffice
Keywords :
magnetic heads; magnetic multilayers; magnetic switching; magnetisation reversal; random-access storage; spin valves; thermal stability; tunnelling; field jitter; micromagnetic modeling; phenomenological damping; stability factor; submicron MRAM cells; submicron tunnel junctions; switching fields; temperature dependence; thermal variations; total energy; Dielectric materials; Disk recording; Jitter; Magnetic field measurement; Magnetic materials; Micromagnetics; Plasma temperature; Stability; Temperature dependence; Temperature distribution;
Journal_Title :
Magnetics, IEEE Transactions on
