DocumentCode :
1531030
Title :
Influence of ion beam milling parameters on MRAM switching
Author :
Sousa, Ricardo C. ; Freitas, Paulo P.
Author_Institution :
Dept. of Phys., Inst. Superior Tecnico, Lisbon, Portugal
Volume :
37
Issue :
4
fYear :
2001
fDate :
7/1/2001 12:00:00 AM
Firstpage :
1973
Lastpage :
1975
Abstract :
The influence of the ion milling parameters on the magnetization reversal of patterned NiFe/CoFe layers is investigated. In 4 μm×2 μm ellipse elements switching of the magnetization occurs through a two step process. The first step is associated with domain wall propagation and the second with vortex annihilation. Reversal fields are reduced by ion milling at low angles (25°-35°). Magnetization reversal fields also show a dependence on ion energy. Milling at low ion energies reduces the switching field and dispersion values. Lower magnetization reversal fields are obtained for thinner layers
Keywords :
cobalt alloys; giant magnetoresistance; iron alloys; machining; magnetic multilayers; magnetic switching; magnetisation reversal; nickel alloys; random-access storage; spin valves; sputter etching; MRAM switching; NiFe-CoFe; domain wall propagation; ion beam milling parameters; ion energy dependence; magnetization reversal; patterned layers; remanence; two step process; vortex annihilation; Argon; Ion beams; Magnetic separation; Magnetic switching; Magnetization reversal; Magnetostatics; Milling; Resists; Saturation magnetization; Shape;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/20.951025
Filename :
951025
Link To Document :
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