Title :
Electronic structure of the Ni2MnIn/InAs (100) interface relevant to spin injection
Author :
Kilian, K.A. ; Victora, R.H.
Author_Institution :
Dept. of Electr. & Comput. Eng., Minnesota Univ., Minneapolis, MN, USA
fDate :
7/1/2001 12:00:00 AM
Abstract :
The ferromagnet-semiconductor system consisting of the Heusler alloy Ni2MnIn and the semiconductor InAs has been proposed as a likely candidate for use in spin injection-based devices. To study the nature of the interface states in this system, we create a model (100) interface. Using a full-potential electronic structure code with a basis set of Slater-type orbitals, we have calculated the moments and density of states of each atom. We find that the magnetic moments of the Ni2MnIn are not killed at the interface. We compare the DOS of Ni2MnIn in the interface model with the DOS of the respective bulk material
Keywords :
density functional theory; electron spin polarisation; indium alloys; indium compounds; interface magnetism; interface states; magnetic moments; manganese alloys; nickel alloys; semiconductor-metal boundaries; Heusler alloy; Ni2MnIn-InAs; Slater-type orbitals; density of states; ferromagnet-semiconductor system; full-potential electronic structure code; interface states; local density approximation; magnetic moments; model interface; spin injection-based devices; spin polarisation; Interface states; Iron alloys; Lattices; Magnetic materials; Magnetic moments; Nickel alloys; Orbital calculations; Polarization; Semiconductor materials; Spin polarized transport;
Journal_Title :
Magnetics, IEEE Transactions on
