• DocumentCode
    1531054
  • Title

    Radiation damage effects by 25 MeV protons and thermal annealing effects on thallium bromide nuclear radiation detectors

  • Author

    Hitomi, K. ; Shoji, T. ; Suehiro, T. ; Hiratate, Y.

  • Author_Institution
    Dept. of Electron., Tohoku Inst. of Technol., Sendai, Japan
  • Volume
    46
  • Issue
    3
  • fYear
    1999
  • fDate
    6/1/1999 12:00:00 AM
  • Firstpage
    213
  • Lastpage
    217
  • Abstract
    In this study, TlBr detectors were irradiated with 25 MeV protons accelerated by an AVF cyclotron. Isothermal annealing was performed to restore the performance of the detectors. In order to characterize the radiation damage and thermal annealing effects on the TlBr detectors, we measured current-voltage (I-V) characteristics, mobility-lifetime (μτ) products and spectrometric responses. The I-V and μτ measurements suggest that electron traps have been induced by 25 MeV protons in the TlBr crystals. X- and γ-ray energy spectra were measured for two different electronic conditions: the electric signals induced mainly by electron carriers traversing the crystal were used for one case and the signal induced by hole carriers were used in the other case. After irradiation of 25 MeV protons, the 241Am X- and γ-ray spectra obtained in the former showed significantly degraded energy resolution. No degradation of energy resolution, however, was observed in the latter case. Noticeable improvements of the degraded detector performance have been observed after the thermal annealing
  • Keywords
    X-ray detection; annealing; carrier lifetime; carrier mobility; gamma-ray detection; proton effects; semiconductor counters; thallium compounds; wide band gap semiconductors; 25 MeV; AVF cyclotron; TlBr; TlBr detectors; X-ray spectra; current-voltage characteristics; degraded energy resolution; electron carriers; gamma-ray spectra; isothermal annealing; mobility-lifetime; radiation damage; radiation damage effects; spectrometric responses; thallium bromide nuclear radiation detectors; thermal annealing effects; Acceleration; Annealing; Charge carrier processes; Current measurement; Cyclotrons; Energy resolution; Isothermal processes; Protons; Radiation detectors; Thermal degradation;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.775516
  • Filename
    775516