DocumentCode
1531060
Title
Magnetoelectronic devices using α-Fe2O3 bottom GMR spin-valves
Author
Bae, Seongtae ; Zurn, Shayne ; Egelhoff, William F., Jr. ; Chen, P.J. ; Sheppard, Larry ; Torok, E. James ; Judy, Jack H.
Author_Institution
Dept. of Electr. & Comput. Eng., Minnesota Univ., Minneapolis, MN, USA
Volume
37
Issue
4
fYear
2001
fDate
7/1/2001 12:00:00 AM
Firstpage
1986
Lastpage
1988
Abstract
The characteristics of a magnetoresistive random access memory (MRAM) and a giant magnetoresistive (GMR) transpinnor, which is an active solid-state device, have been investigated using α-Fe2 O3 bottom GMR spin-valves. Patterned α-Fe2 O3 bottom GMR spin-valve devices exhibited excellent device performance, which is related to the high GMR ratio, high initial device resistivity, and good magnetic properties. The magnetic and electrical device testing results of MRAM and transpinnor suggest that they are potential candidates in high-density memories. The possibility of fabricating both an operating device (transpinnor) for the MRAM and a MRAM memory element on the same substrate offers the potential of reducing the real MRAM cell size
Keywords
giant magnetoresistance; iron compounds; magnetic heads; magnetic multilayers; random-access storage; spin valves; thermal stability; Fe2O3; active solid-state device; chemical stability; giant magnetoresistive transistor; giant magnetoresistive transpinnor; haematite bottom GMR spin-valve; high GMR ratio; high initial device resistivity; high-density memories; magnetoelectronic devices; magnetoresistive random access memory; read-write characteristics; thermal stability; Circuit testing; Fabrication; Giant magnetoresistance; Magnetic devices; Magnetic properties; Magnetoelectronics; Random access memory; Resistors; Solid state circuits; Thermal stability;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/20.951029
Filename
951029
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