Title :
Magnetoelectronic devices using α-Fe2O3 bottom GMR spin-valves
Author :
Bae, Seongtae ; Zurn, Shayne ; Egelhoff, William F., Jr. ; Chen, P.J. ; Sheppard, Larry ; Torok, E. James ; Judy, Jack H.
Author_Institution :
Dept. of Electr. & Comput. Eng., Minnesota Univ., Minneapolis, MN, USA
fDate :
7/1/2001 12:00:00 AM
Abstract :
The characteristics of a magnetoresistive random access memory (MRAM) and a giant magnetoresistive (GMR) transpinnor, which is an active solid-state device, have been investigated using α-Fe2 O3 bottom GMR spin-valves. Patterned α-Fe2 O3 bottom GMR spin-valve devices exhibited excellent device performance, which is related to the high GMR ratio, high initial device resistivity, and good magnetic properties. The magnetic and electrical device testing results of MRAM and transpinnor suggest that they are potential candidates in high-density memories. The possibility of fabricating both an operating device (transpinnor) for the MRAM and a MRAM memory element on the same substrate offers the potential of reducing the real MRAM cell size
Keywords :
giant magnetoresistance; iron compounds; magnetic heads; magnetic multilayers; random-access storage; spin valves; thermal stability; Fe2O3; active solid-state device; chemical stability; giant magnetoresistive transistor; giant magnetoresistive transpinnor; haematite bottom GMR spin-valve; high GMR ratio; high initial device resistivity; high-density memories; magnetoelectronic devices; magnetoresistive random access memory; read-write characteristics; thermal stability; Circuit testing; Fabrication; Giant magnetoresistance; Magnetic devices; Magnetic properties; Magnetoelectronics; Random access memory; Resistors; Solid state circuits; Thermal stability;
Journal_Title :
Magnetics, IEEE Transactions on
