DocumentCode
1531071
Title
Giant magnetoresistance induced by magnetic barriers
Author
Kubrak, V. ; Edmonds, K.W. ; Neumann, A.C. ; Gallagher, B.L. ; Main, P.C. ; Henini, M. ; Marrows, C.H. ; Hickey, B.J. ; Thoms, S.
Author_Institution
Sch. of Phys. & Astron., Nottingham Univ., UK
Volume
37
Issue
4
fYear
2001
fDate
7/1/2001 12:00:00 AM
Firstpage
1992
Lastpage
1994
Abstract
We present experimental results for hybrid ferromagnet/semiconductor devices in which 2D electrons propagate through sub-micron width magnetic barriers. Magnetoresistances, MR, of ~1000% are found at low temperatures and ~1% at room temperature. We compared the measured behavior with numerical calculations and give the conditions needed to achieve large room temperature MR
Keywords
Hall effect devices; giant magnetoresistance; magnetoresistive devices; semiconductor heterojunctions; two-dimensional electron gas; (AlGa)As-GaAs; 2D electrons; Co; giant magnetoresistance; hybrid ferromagnet/semiconductor devices; large room temperature MR; magnetic barriers; magnetoresistances; Electrons; Giant magnetoresistance; Magnetic anisotropy; Magnetic field measurement; Magnetic fields; Magnetic sensors; Magnetic separation; Perpendicular magnetic anisotropy; Saturation magnetization; Temperature dependence;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/20.951031
Filename
951031
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