Title :
Large area silicon drift detectors for X-rays-new results
Author :
Iwanczyk, J.S. ; Patt, B.E. ; Tull, C.R. ; Segal, J.D. ; Kenney, C.J. ; Bradley, J. ; Hedman, B. ; Hodgson, K.O.
Author_Institution :
Photon Imaging Inc., Northridge, CA, USA
fDate :
6/1/1999 12:00:00 AM
Abstract :
Large area silicon drift detectors, consisting of 8 mm and 12 mm diameter hexagons, were fabricated on 0.35 mm thick high resistivity n-type silicon. An external FET and a low-noise charge sensitive preamplifier were used for testing the prototype detectors. The detector performance was measured in the range -75 to 25°C using Peltier cooling, and from 0.125 to 6 μs amplifier shaping time. Measured energy resolutions were 159 eV FWHM and 263 eV FWHM for the 0.5 cm2 and 1 cm2 detectors, respectively (at 5.9 keV, -75°C, 6 μs shaping time). The uniformity of the detector response over the entire active area (measured using 560 nm light) was <0.5%
Keywords :
X-ray detection; field effect transistors; nuclear electronics; preamplifiers; silicon radiation detectors; -75 to 25 C; Peltier cooling; Si; X-ray measurement; amplifier shaping time; energy resolutions; external FET; high resistivity n-type silicon; large area silicon drift detectors; low-noise charge sensitive preamplifier; Conductivity; Cooling; FETs; Preamplifiers; Prototypes; Silicon; Testing; Time measurement; X-ray detection; X-ray detectors;
Journal_Title :
Nuclear Science, IEEE Transactions on
