Dynamic domain observation in narrow thin films

Author

Takezawa, Masaaki ; Yamasaki, Jiro

Author_Institution

Dept. of Electr. Eng., Kyushu Inst. of Technol., Kitakyushu, Japan

Volume

37

Issue

4

fYear

2001

fDate

7/1/2001 12:00:00 AM

Firstpage

2034

Lastpage

2037

Abstract

We examined the domain structure of high-frequency carrier-type thin-film magnetic field sensors that consist of narrow rectangular CoNbZr thin film to clarify the magnetization process of the sensor head. Moreover, the cause of disagreement between measured and calculated sensitivities was investigated. The measured impedance change of the sensor head can be explained qualitatively by consideration of the wall displacement owing to the growth of the closure domain

Keywords

cobalt alloys; magnetic domain walls; magnetic sensors; magnetic thin film devices; niobium alloys; zirconium alloys; CoNbZr; CoNbZr thin film; HF carrier-type thin-film sensors; closure domain growth; domain structure; dynamic domain observation; high-frequency carrier; magnetic field sensors; magnetization process; narrow thin films; sensor head impedance change; wall displacement; Displacement measurement; Impedance measurement; Magnetic domain walls; Magnetic field measurement; Magnetic films; Magnetic heads; Magnetic sensors; Magnetization processes; Thin film sensors; Transistors;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.951045

Filename

951045