Title :
Predicted performance of quantum-well GaAs-(GaAl)As optical amplifiers
Author :
Stevens, Peter John ; Mukai, Takaaki
Author_Institution :
NTT Basic Res. Lab., Tokyo, Japan
fDate :
11/1/1990 12:00:00 AM
Abstract :
The gain, noise, and saturation performance of GaAs-(GaAl)As quantum-well laser amplifiers is calculated. A single-quantum-well amplifier with 100-mA injection should achieve similar gains to those of present devices with bulk active regions, but with improved saturation output powers and near-ideal noise performance. A low-current amplifier with a 2.5-mA injection current is investigated for varying well thickness and number of wells
Keywords :
III-V semiconductors; aluminium compounds; electron device noise; gallium arsenide; semiconductor junction lasers; semiconductor quantum wells; 2.5 mA; GaAs-(GaAl)As quantum well laser amplifiers; III-V semiconductors; gain performance; injection current; low-current amplifier; near-ideal noise performance; optical amplifiers; saturation output powers; saturation performance; single-quantum-well amplifier; varying well thickness; Active noise reduction; Optical amplifiers; Optical noise; Optical saturation; Performance gain; Power amplifiers; Power generation; Quantum well lasers; Quantum wells; Stimulated emission;
Journal_Title :
Quantum Electronics, IEEE Journal of
