Numerical simulation of the nonlinear response of a p-i-n photodiode under high illumination

Author

Dentan, Martin ; de Cremoux, B.

Author_Institution

Central Res. Lab., Orsay, France

Volume

8

Issue

8

fYear

1990

fDate

8/1/1990 12:00:00 AM

Firstpage

1137

Lastpage

1144

Abstract

A theoretical study and a model for the numerical simulation of the nonlinear electrical response, including the harmonic-generation rate calculation, of a p-i-n InGaAs photodiode under high-illumination conditions are discussed. The device structure is described. An algorithm, which is based on a finite-difference calculation, is used to calculate the temporal electrical response of the device to a microwave optical input signal. The different harmonics in the power spectrum are obtained using the fast Fourier transform (FFT) calculation. This model is a tool for designing the p-i-n photodiode and determining the conditions for its utilization in order to avoid the electrical response nonlinearity

Keywords

difference equations; fast Fourier transforms; modelling; optical harmonic generation; p-i-n diodes; photodiodes; InGaAs photodiode; device structure; fast Fourier transform; finite-difference calculation; harmonic-generation rate calculation; high illumination; microwave optical input signal; nonlinear electrical response; nonlinear response; p-i-n photodiode; p-i-n photodiode design; power spectrum; temporal electrical response; Finite difference methods; Indium gallium arsenide; Microwave devices; Nonlinear optical devices; Nonlinear optics; Numerical models; Numerical simulation; Optical devices; PIN photodiodes; Power system harmonics;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/50.57833

Filename

57833