Title :
Numerical simulation of the nonlinear response of a p-i-n photodiode under high illumination
Author :
Dentan, Martin ; de Cremoux, B.
Author_Institution :
Central Res. Lab., Orsay, France
fDate :
8/1/1990 12:00:00 AM
Abstract :
A theoretical study and a model for the numerical simulation of the nonlinear electrical response, including the harmonic-generation rate calculation, of a p-i-n InGaAs photodiode under high-illumination conditions are discussed. The device structure is described. An algorithm, which is based on a finite-difference calculation, is used to calculate the temporal electrical response of the device to a microwave optical input signal. The different harmonics in the power spectrum are obtained using the fast Fourier transform (FFT) calculation. This model is a tool for designing the p-i-n photodiode and determining the conditions for its utilization in order to avoid the electrical response nonlinearity
Keywords :
difference equations; fast Fourier transforms; modelling; optical harmonic generation; p-i-n diodes; photodiodes; InGaAs photodiode; device structure; fast Fourier transform; finite-difference calculation; harmonic-generation rate calculation; high illumination; microwave optical input signal; nonlinear electrical response; nonlinear response; p-i-n photodiode; p-i-n photodiode design; power spectrum; temporal electrical response; Finite difference methods; Indium gallium arsenide; Microwave devices; Nonlinear optical devices; Nonlinear optics; Numerical models; Numerical simulation; Optical devices; PIN photodiodes; Power system harmonics;
Journal_Title :
Lightwave Technology, Journal of
