Title :
Properties of high resistivity CoPdAlO film for possibility of application to RF integrated inductor
Author :
Kim, Taek-Soo ; Suezawa, Kenkichi ; Yamaguchi, Masahiro ; Arai, Ken-Ichi ; Shimada, Yutaka ; Kim, Chong-Oh
Author_Institution :
Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan
fDate :
7/1/2001 12:00:00 AM
Abstract :
Presently, an inductor adapted at MMIC (Monolithic microwave integrated circuit) which is used for cellular phone or PHS operates at quasimicrowave range over 800 MHz. However, a W-CDMA (Wideband code division multiple access) will use about 2 GHz range. Therefore magnetic film devices should be compatible up to 2 GHz. We deposited Co-Pd-Al-O system film using rf sputtering method which is expected for operating at 2 GHz, and investigated the effect of Pd content and magnetic field annealing. When Pd composition is 19%, Hk was 118 Oe, and showed flat frequency characteristics until 1.5 GHz. The Q factor (=μ\´/μ") was 23.3 at 1 GHz, 6.7 at 1.5 GHz and 1.5 at 2 GHz, respectively. Resonance frequency was 2.9 GHz, therefore Co-Pd-Al-O thin film could be used at over 1 GHz, and also expected as an inductor material for next generation MMIC
Keywords :
Q-factor; aluminium compounds; cobalt compounds; electrical resistivity; ferromagnetic materials; inductors; magnetic annealing; magnetic permeability; magnetic thin film devices; magnetic thin films; palladium compounds; soft magnetic materials; sputtered coatings; 1 to 2 GHz; CoPdAlO; CoPdAlO granular film; Q-factor; RF integrated inductor; RF sputtering; electrical resistivity; magnetic field annealing; magnetic film device; magnetic permeability; resonance frequency; soft ferromagnet; Cellular phones; Conductivity; MMICs; Magnetic films; Microwave devices; Microwave integrated circuits; Monolithic integrated circuits; Multiaccess communication; Thin film inductors; Wideband;
Journal_Title :
Magnetics, IEEE Transactions on
