• DocumentCode
    1531863
  • Title

    FeTaN/IrMn exchange-coupled multilayer films as soft underlayers for perpendicular media

  • Author

    Jung, H.S. ; Doyle, W.D.

  • Author_Institution
    Center for Mater. for Inf. Technol., Alabama Univ., Tuscaloosa, AL, USA
  • Volume
    37
  • Issue
    4
  • fYear
    2001
  • fDate
    7/1/2001 12:00:00 AM
  • Firstpage
    2294
  • Lastpage
    2297
  • Abstract
    Soft underlayers of FeTaN/IrMn exchange-coupled films for perpendicular media have been investigated. FeTaN(tFeTaN)/IrMn (10 nm) multilayer films having different FeTaN thicknesses tFeTaN from 20 nm to 200 nm were prepared while keeping the total FeTaN thickness at 200 nm. When tFeTnN decreased below 100 nm to 20 mn, the exchange bias field increased from 3.6 Oe to 77 Oe, and the pinning field from 25 Oe to 105 Oe. The interfacial exchange energy, J, was 0.10~0.13 ergs/cm2. As the exchange bias field increased, the angular reversibility increased from 10° to 57° in good agreement with the coherent rotational model. Radially oriented multilayer films of FeTaN (20 nm)/[IrMn(10 nm)/FeTaN(20 nm)]9 were successfully prepared on 65 mm disks and showed excellent angular reversibility, a pinning field >70 Oe, and a permeability of 70 up to 2 GHz
  • Keywords
    exchange interactions (electron); ferromagnetic materials; iridium alloys; iron alloys; magnetic multilayers; magnetic permeability; perpendicular magnetic recording; surface energy; tantalum alloys; 10 nm; 20 to 200 nm; 65 mm; FeTaN-IrMn; angular reversibility; coherent rotational model; exchange bias field; exchange-coupled multilayer films; interfacial exchange energy; permeability; perpendicular media; pinning field; radially oriented multilayer films; soft underlayers; Coercive force; Information technology; Magnetic fields; Magnetic films; Magnetic flux; Magnetic multilayers; Nonhomogeneous media; Permeability; Saturation magnetization; Temperature;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/20.951152
  • Filename
    951152