Title :
Propagation of a magnetic domain wall in the presence of AFM fabricated defects
Author :
Schumacher, H.W. ; Ravelosona, D. ; Cayssol, F. ; Wunderlich, J. ; Chappert, C. ; Mathet, V. ; Thiaville, A. ; Jamet, J.P. ; Ferré, J. ; Haug, R.J.
Author_Institution :
Inst. d´´Elektron. Fondamentale, Univ. de Paris-Sud, Orsay, France
fDate :
7/1/2001 12:00:00 AM
Abstract :
We can control the magnetization reversal process in Pt/Co/Pt ultra thin film devices by using mesoscopic defects fabricated by atomic force microscope (AFM) lithography. Holes and grooves locally cutting the Co layer are written by direct mechanical indentation of the metal samples by the AFM tip. The smallest lateral feature size of these artificial structures (down to 20 nm for a hole) is comparable to the intrinsic Barkhausen length (~25 nm) of the films. The influence of the AFM fabricated structures on the magnetization reversal process in micron sized devices was studied by Kerr microscopy and extraordinary Hall effect measurements. Single point defects act as mesoscopic domain wall pinning centers, while lines effectively block the domain wall propagation. Study of the influence of well characterized defects should help understand better the magnetization reversal processes in the films
Keywords :
Barkhausen effect; Hall effect; atomic force microscopy; cobalt; magnetic domain walls; magnetic multilayers; magnetic thin film devices; magnetisation reversal; platinum; 20 nm; AFM fabricated defects; Hall effect measurements; Kerr microscopy; Pt-Co-Pt; Pt/Co/Pt ultra thin film devices; direct mechanical indentation; intrinsic Barkhausen length; lateral feature size; magnetic domain wall; magnetization reversal process; mesoscopic defects; mesoscopic domain wall pinning centers; Atomic force microscopy; Atomic layer deposition; Force control; Hall effect; Lithography; Magnetic domain walls; Magnetic force microscopy; Magnetization reversal; Size measurement; Thin film devices;
Journal_Title :
Magnetics, IEEE Transactions on
