Title :
Comments on "Sinlultaneous determination of transistor noise, gain, and scattering parameters for amplifier design through noise figure measurements only"
Author :
Pospieszalski, M.W.
Author_Institution :
Nat. Radio Astron. Obs., Charlottesville, VA, USA
fDate :
6/1/1986 12:00:00 AM
Abstract :
It is noted that in the above named work (see ibid., vol.IM-35, p.89-91, March 1985) expression (4) appears to be correct only if the physical temperature Ta of an isolator is equal to the standard temperature T0=290K. The correct expression for the case Ta≠TO=290K is given. In replying, the original authors note that the correction does not affect noise characterization of transistors at room temperature (Ta≡297K≡TO=290K). A more complete relationship for F´(S´22) is also noted.
Keywords :
S-parameters; amplification; amplifiers; electric noise measurement; network synthesis; transistor circuits; amplifier design; electric noise measurement; gain; noise figure measurement; scattering parameters; transistor circuit design; transistor noise;
Journal_Title :
Instrumentation and Measurement, IEEE Transactions on
DOI :
10.1109/TIM.1986.6499097