Title :
Single Trench SiON Waveguide TE-TM Mode Converter
Author :
Nakayama, Kenichi ; Shoji, Yuya ; Mizumoto, Tetsuya
Author_Institution :
Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Tokyo, Japan
Abstract :
A TE-TM mode converter fabricated in a single trench SiON waveguide is described. The device has the advantage that only single masking and etching process is needed to fabricate it. We discuss the design of the mode converter from the view point of fabrication tolerance. The single trench structure is fabricated using the reactive ion-etch lag phenomenon. A 97% TE-TM mode conversion (extinction ratio=15 dB) is demonstrated at a wavelength of 1.27μm . An excess loss is measured to be 0.8 dB.
Keywords :
integrated optics; optical fabrication; optical waveguides; silicon compounds; sputter etching; SiON; etching process; reactive ion etch lag phenomenon; single masking process; single trench waveguide; transverse electrric-transverse magnetic mode converter; wavelength 1.27 mum; Etching; Loss measurement; Optical device fabrication; Optical waveguides; Silicon; Wavelength measurement; Photonic integrated circuits (PICs); TE-TM mode converter; polarization rotator; silicon oxynitride;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2012.2202646
