Title :
± 1V high frequency four quadrant current multiplier
Author :
Ghanavati, B. ; Nowbakht, Azim
Author_Institution :
Dept. of Electron. Eng., Islamic Azad Univ. of Mahshahr, Mahshahr, Iran
fDate :
7/1/2010 12:00:00 AM
Abstract :
A high frequency four quadrant current multiplier is presented. The current multiplier uses complementary MOS devices in the triode region and exploits the square-law behaviour of saturated MOS transistors. The circuit operates using the supply voltages of ±1V. The cutoff frequency is 1.74± GHz with a total harmonic distortion less than 0.065 ± (at 1±MHz). The power dissipation is 0.85±mW.
Keywords :
CMOS analogue integrated circuits; harmonic distortion; multiplying circuits; complementary MOS devices; harmonic distortion; high frequency four quadrant current multiplier; power dissipation; saturated MOS transistors; square-law behaviour; triode region;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2010.1020
