Dependence of ionizing radiation induced hFE degradation on emitter periphery

Devices which differ only iin emitter periphery were subjected to ionizing radiation to investigate the influence of emitter periphery on h_FE degradation. The data indicate that, within reasonable limits, the increase in base current from ionizing radiation is directly proportional to the length of the emitter periphery. However, differences in fabrication techniques, passivation materials and processing, and silicon crystal orientation may very well have a greater influence on the degradation from ionizing radiation than the emitter periphery.