Title :
Fundamental oscillations at ~900 GHz with low bias voltages in RTDs with spike-doped structures
Author :
Suzuki, Satoshi ; Sawada, Kazuaki ; Teranishi, A. ; Asada, Minoru ; Sugiyama, H. ; Yokoyama, Haruki
Author_Institution :
Interdiscipl. Grad. Sch. of Sci. & Eng., Tokyo Inst. of Technol., Tokyo, Japan
fDate :
7/1/2010 12:00:00 AM
Abstract :
Fundamental oscillations are demonstrated at around 900 GHz with low bias voltages in resonant tunnelling diodes (RTDs) having spike-doped structures. Voltages at the current peak are 0.67 and 0.4 V for RTDs with spike-doping concentrations of 2×1018 and 1×1019 cm-3, respectively, and 0.94 V for the RTD without spike doping. The peak current densities are around 18 mA/μm2 and remain almost unchanged even after spike doping. The highest oscillation frequency observed in this study is 898 GHz in the 0.53 μm2 mesa area for the RTD with a spike-doping concentration of 2×1018 cm-3.
Keywords :
oscillations; resonant tunnelling diodes; submillimetre wave diodes; frequency 898 GHz; fundamental oscillation frequency; low bias voltages; resonant tunnelling diodes; spike-doped structures; voltage 0.4 V; voltage 0.67 V; voltage 0.94 V;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2010.1102
