• DocumentCode
    1532483
  • Title

    Fundamental oscillations at ~900 GHz with low bias voltages in RTDs with spike-doped structures

  • Author

    Suzuki, Satoshi ; Sawada, Kazuaki ; Teranishi, A. ; Asada, Minoru ; Sugiyama, H. ; Yokoyama, Haruki

  • Author_Institution
    Interdiscipl. Grad. Sch. of Sci. & Eng., Tokyo Inst. of Technol., Tokyo, Japan
  • Volume
    46
  • Issue
    14
  • fYear
    2010
  • fDate
    7/1/2010 12:00:00 AM
  • Firstpage
    1006
  • Lastpage
    1007
  • Abstract
    Fundamental oscillations are demonstrated at around 900 GHz with low bias voltages in resonant tunnelling diodes (RTDs) having spike-doped structures. Voltages at the current peak are 0.67 and 0.4 V for RTDs with spike-doping concentrations of 2×1018 and 1×1019 cm-3, respectively, and 0.94 V for the RTD without spike doping. The peak current densities are around 18 mA/μm2 and remain almost unchanged even after spike doping. The highest oscillation frequency observed in this study is 898 GHz in the 0.53 μm2 mesa area for the RTD with a spike-doping concentration of 2×1018 cm-3.
  • Keywords
    oscillations; resonant tunnelling diodes; submillimetre wave diodes; frequency 898 GHz; fundamental oscillation frequency; low bias voltages; resonant tunnelling diodes; spike-doped structures; voltage 0.4 V; voltage 0.67 V; voltage 0.94 V;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2010.1102
  • Filename
    5507617
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1532483