DocumentCode
1532511
Title
Transfer of InP-based HBV epitaxy onto borosilicate glass substrate by anodic bonding
Author
Dastjerdi, M.H.T. ; Sanz-Velasco, A. ; Vukusic, Josip ; Sadeghi, Mohammadreza ; Stake, Jan
Author_Institution
Dept. of Microtechnol. & Nanosci. - MC2, Chalmers Univ. of Technol., Göteborg, Sweden
Volume
46
Issue
14
fYear
2010
fDate
7/1/2010 12:00:00 AM
Firstpage
1013
Lastpage
1014
Abstract
A new fabrication process is presented for epitaxial transfer of InP-based heterostructure barrier varactor diodes, as high-frequency varactor multipliers, onto low-dielectric borosilicate glass substrate, employing anodic bonding. The fabricated diodes on the new host substrate display symmetric electrical characteristics with only minor differences compared to those of the reference devices on the original InP substrate.
Keywords
III-V semiconductors; borosilicate glasses; epitaxial growth; indium compounds; integrated circuit bonding; semiconductor diodes; substrates; varactors; HBV epitaxy; InP; borosilicate glass substrate; electrical characteristics; employing anodic bonding; fabricated diodes; fabrication process; heterostructure barrier; high-frequency varactor multipliers; host substrate display; varactor diodes;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2010.0760
Filename
5507621
Link To Document